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SUD20N10-66L-GE3

Transistors - FETs, MOSFETs - RF

Manufacturer No:
SUD20N10-66L-GE3
Manufacture:
Vishay
Datasheet:
SUD20N10-66L-GE3
Description:
MOSFET N-CH 100V 16.9A TO-252

In Stock

2000 pcs On sales

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Product Attribute

Vishay SUD20N10-66L-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SUD20N10-66L-GE3.

Categories
Discrete Semiconductor Products
Manufacturer
Vishay
Packaging
Reel - TR
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
100V
Continuous Drain Current at 25°C
16.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate-Source Threshold Voltage
3V @ 250μA
Max Gate Charge
30nC @ 10V
Max Input Capacitance
860pF @ 50V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
2.1W (Ta), 41.7W (Tc)
Maximum Rds On at Id,Vgs
66 mOhm @ 6.6A, 10V
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
TO-252
Dimension
TO-252-3, DPak (2 Leads + Tab), SC-63
Popularity
Medium
Fake Threat In the Open Market
38 pct.
Supply and Demand Status
Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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