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Vishay VB20120C-E3/8W technical specifications, attributes, parameters and parts with similar specifications to Vishay VB20120C-E3/8W.
Trench MOS Schottky technology
DIODE ARRAY SCHOTTKY 100V TO263
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A | DIODE ARRAY SCHOTTKY 120V TO263
DIODE ARRAY SCHOTTKY 150V TO263 / Diode Array 1 Pair Common Cathode Schottky 150 V 10A Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
DIODE ARRAY SCHOTTKY 150V TO263