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IPP600N25N3G

Transistors - FETs, MOSFETs - RF

Manufacturer No:
IPP600N25N3G
Manufacture:
Infineon Technologies
Datasheet:
IPP600N25N3G
Description:
MOSFET N-CH 250V 25A TO220-3

In Stock

24000 pcs On sales

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IPP600N25N3G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP600N25N3G.

Categories
Discrete Semiconductor Products
Manufacturer
Infineon Technologies
Packaging
Tube/Rail
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
250V
Continuous Drain Current at 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 90μA
Max Gate Charge
29nC @ 10V
Max Input Capacitance
2350pF @ 100V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
136W (Tc)
Maximum Rds On at Id,Vgs
60 mOhm @ 25A, 10V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
Through Hole
Case / Package
PG-TO220-3-1
Dimension
TO-220-3
Popularity
Medium
Fake Threat In the Open Market
35 pct.
Supply and Demand Status
Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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