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IPP60R022S7XKSA1

Transistors - FETs, MOSFETs - RF

Manufacturer No:
IPP60R022S7XKSA1
Manufacture:
Infineon Technologies
Package:
TO-220-3
Datasheet:
IPP60R022S7XKSA1
Description:
MOSFET N-CH 600V 23A TO220-3 / N-Channel 600 V 23A (Tc) 390W (Tc) Through Hole PG-TO220-3-1

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Shipping Method
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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IPP60R022S7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP60R022S7XKSA1.

Category
Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr
Infineon Technologies
Series
CoolMOS™S7
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
22mOhm @ 23A, 12V
Vgs(th) (Max) @ Id
4.5V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 12 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5639 pF @ 300 V
Power Dissipation (Max)
390W (Tc)
Temperature Range - Operating
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
IPP60R022
MSL Level
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IPP60R022S7XKSA1,SP003393028
Standard Package
50
Fake Threat In the Open Market
58 pct.

Company Profile

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