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NVGS3130NT1G

Name: NVGS3130NT1G
Brand: ON Semiconductor
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: NVGS3130NT1G
Manufacture:: ON Semiconductor
Datasheet:: NVGS3130NT1G
Description:: MOSFET N-CH 20V 4.2A 6TSOP

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0 pcs On sales

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Product Attribute

ON Semiconductor NVGS3130NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVGS3130NT1G.

Categories: Discrete Semiconductor Products
Manufacturer: ON Semiconductor
Packaging: Reel - TR
Status: Active
Polarity: N-Channel
Technology: MOSFET
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 20.3nC @ 4.5V
Max Input Capacitance: 935pF @ 16V
Maximum Gate-Source Voltage: ±8V
Power Dissipation (Max): 600mW (Ta)
Maximum Rds On at Id,Vgs: 24 mOhm @ 5.6A, 4.5V
Temperature Range - Operating: -55°C to 150°C (TJ)
Mounting: SMD (SMT)
Case / Package: 6-TSOP
Dimension: SOT-23-6
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

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