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NVGS3441T1G

Transistors - FETs, MOSFETs - RF

Manufacturer No:
NVGS3441T1G
Manufacture:
ON Semiconductor
Datasheet:
NVGS3441T1G
Description:
MOSFET P-CH 20V 2.35A 6-TSOP

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0 pcs On sales

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Product Attribute

ON Semiconductor NVGS3441T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVGS3441T1G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Active
Polarity
P-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
20V
Continuous Drain Current at 25°C
1.65A (Ta)
Gate-Source Threshold Voltage
1.5V @ 250μA
Max Gate Charge
14nC @ 4.5V
Max Input Capacitance
480pF @ 5V
Maximum Rds On at Id,Vgs
90 mOhm @ 3.3A, 4.5V
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
6-TSOP
Dimension
SOT-23-6
Popularity
Medium
Fake Threat In the Open Market
49 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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