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STB200N4F3

Transistors - FETs, MOSFETs - RF

Manufacturer No:
STB200N4F3
Manufacture:
STMicroelectronics
Datasheet:
STB200N4F3
Description:
MOSFET N-CH 40V 120A D2PAK

In Stock

117600 pcs On sales

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Delivery Time
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Product Attribute

STMicroelectronics STB200N4F3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB200N4F3.

Categories
Discrete Semiconductor Products
Manufacturer
STMicroelectronics
Packaging
Reel - TR
Status
Obsolete(EOL)
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
40V
Continuous Drain Current at 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 250μA
Max Gate Charge
75nC @ 10V
Max Input Capacitance
5100pF @ 25V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
300W (Tc)
Maximum Rds On at Id,Vgs
4 mOhm @ 80A, 10V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
SMD (SMT)
Case / Package
D2PAK
Dimension
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Popularity
Medium
Fake Threat In the Open Market
72 pct.
Supply and Demand Status
Sufficient

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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