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STB200NF04-1

Transistors - FETs, MOSFETs - RF

Manufacturer No:
STB200NF04-1
Manufacture:
STMicroelectronics
Datasheet:
STB200NF04-1
Description:
MOSFET N-CH 40V 120A I2PAK

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16000 pcs On sales

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Product Attribute

STMicroelectronics STB200NF04-1 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB200NF04-1.

Categories
Discrete Semiconductor Products
Manufacturer
STMicroelectronics
Packaging
Tube/Rail
Status
Obsolete(EOL)
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
40V
Continuous Drain Current at 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 250μA
Max Gate Charge
210nC @ 10V
Max Input Capacitance
5100pF @ 25V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
310W (Tc)
Maximum Rds On at Id,Vgs
3.7 mOhm @ 90A, 10V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
Through Hole
Case / Package
I2PAK
Dimension
TO-262-3 Long Leads, I2Pak, TO-262AA
Family Name
STB200NF04-1
Introduction Date
December 10, 2003
ECCN
EAR99
Country of Origin
China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date
Obsolete
Is this a common-used part?
Yes
Popularity
High
Fake Threat In the Open Market
62 pct.
Supply and Demand Status
Limited

Company Profile

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