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STB27NM60ND

Electronic Wholesale

Manufacturer No:
STB27NM60ND
Manufacture:
STMicroelectronics
Datasheet:
STB27NM60ND
Description:
Low input capacitance and gate charge | MOSFET N-CH 600V 21A D2PAK

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11300 pcs On sales

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Product Attribute

STMicroelectronics STB27NM60ND technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB27NM60ND.

Categories
Discrete Semiconductor Products
Manufacturer
STMicroelectronics
Packaging
Reel
Status
Obsolete
Transistor Polarity
N-Channel
Technology
MOSFET
Vds - Drain-Source Breakdown Voltage
600V
Id - Continuous Drain Current
21A
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Maximum) at Id, Vgs
160mOhm at 10.5A, 10V
Gate Source Voltage(th) (Maximum) at Id
5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs
80nC at 10V
Gate Source Voltage (Maximum)
±25V
Input Capacitance (Ciss) (Maximum) at Vds
2400pF at 50V
Power Dissipation (Maximum)
160W
Temperature Range - Operating
150°C
Mounting Style
SMD
Supplier Device Package
D2PAK
Manufacturer Package
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity
1
MSL Level
1 (Unlimited)
Manufacturer Homepage
www.st.com
Popularity
Medium
Fake Threat In the Open Market
38 pct.
Supply and Demand Status
Limited

Company Profile

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