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RN1101,LF(CT

Name: RN1101,LF(CT
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

RF Transistors (BJT)

Manufacturer No:: RN1101,LF(CT
Manufacture:: Toshiba Semiconductor and Storage
Package:: SC-75, SOT-416
Datasheet:: RN1101,LF(CT
Description:: TRANS PREBIAS NPN 50V 0.1A SSM / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM

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Product Attribute

Toshiba Semiconductor and Storage RN1101,LF(CT technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1101,LF(CT.

Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr: Toshiba Semiconductor and Storage
Package: Tape & Reel
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting: SMD (SMT)
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
Base Product Number: RN1101
MSL Level: 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.21.0075
Other Names: RN1101,LF(CTTR,RN1101,LF(CTDKR,RN1101,LF(CB,RN1101(T5LFT)TR-ND,RN1101(T5LFT)TR,RN1101(T5LFT)CT-ND,RN1101T5LFT,RN1101(T5L,F,T),RN1101(T5LFT)CT,RN1101(T5LFT)DKR-ND,RN1101(T5LFT)DKR,RN1101,LF(CTCT
Standard Package: 3,000
Fake Threat In the Open Market: 74 pct.

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