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RN1101ACT(TPL3)

Name: RN1101ACT(TPL3)
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors (BJT) - Single, Pre - Biased

Manufacturer No:: RN1101ACT(TPL3)
Manufacture:: Toshiba Semiconductor and Storage
Datasheet:: RN1101ACT(TPL3)
Description:: TRANS PREBIAS NPN 0.1W CST3

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0 pcs On sales

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Product Attribute

Toshiba Semiconductor and Storage RN1101ACT(TPL3) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1101ACT(TPL3).

Categories: Discrete Semiconductor Products
Manufacturer: Toshiba Semiconductor and Storage
Packaging: Reel - TR
Status: Obsolete(EOL)
Transistor Polarity: NPN - Pre-Biased
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Typical Gain (hFE) (Min): 30 @ 10mA, 5V
Max Vce (sat): 150mV @ 500μA, 5mA
Collector Cut-off Current(Max): 500nA
Maximum Power Dissipation: 100mW
Mounting: SMD (SMT)
Case / Package: CST3
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

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