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RN1103MFV,L3F

Transistors (BJT) - Single, Pre - Biased

Manufacturer No:
RN1103MFV,L3F
Manufacture:
Toshiba Semiconductor and Storage
Datasheet:
RN1103MFV,L3F
Description:
TRANS PREBIAS NPN 150MW VESM

In Stock

7290 pcs On sales

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Product Attribute

Toshiba Semiconductor and Storage RN1103MFV,L3F technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1103MFV,L3F.

Categories
Discrete Semiconductor Products
Manufacturer
Toshiba Semiconductor and Storage
Packaging
Reel - TR
Status
Active
Transistor Polarity
NPN - Pre-Biased
Maximum Current Collector
100mA
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Resistor - Base (R1) (Ohms)
22k
Resistor - Emitter Base (R2) (Ohms)
22k
Typical Gain (hFE) (Min)
70 @ 10mA, 5V
Max Vce (sat)
300mV @ 500μA, 5mA
Collector Cut-off Current(Max)
500nA
Maximum Power Dissipation
150mW
Mounting
SMD (SMT)
Case / Package
VESM
Popularity
Medium
Fake Threat In the Open Market
49 pct.
Supply and Demand Status
Balance
Quantity per package
8k pcs

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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