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RN1105MFV(TL3,T)

Name: RN1105MFV(TL3,T)
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

RF Transistors (BJT)

Manufacturer No:: RN1105MFV(TL3,T)
Manufacture:: Toshiba Semiconductor and Storage
Datasheet:: RN1105MFV(TL3,T)
Description:: Trans NPN Pre-bias 50V Vesm

In Stock

0 pcs On sales

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Toshiba Semiconductor and Storage RN1105MFV(TL3,T) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1105MFV(TL3,T).

Mounting: SMD (SMT)
Case / Package: SOT-723
Collector Emitter Voltage (VCEO): 50 V
Continuous Collector Current: 100 mA
Element Configuration: Single
Emitter Base Voltage (VEBO): 5 V
hFE Min: 80
Max Collector Current: 100 mA
Max Power Dissipation: 150 mW
Mount: Surface Mount
Number of Pins: 3
Polarity: NPN
Radiation Hardening: No
RoHS: Compliant
Categories: RF Transistors(BJT)
Manufacturer: Toshiba Semiconductor and Storage
Popularity: Low
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Shortage

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