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parameters
IRC630PBF
- Manufacturer No:
- IRC630PBF
- Manufacture:
- Vishay
- Datasheet:
- IRC630PBF
- Description:
- HEXFET POWER MOSFET | MOSFET N-CH 200V 9A TO-220-5
In Stock
0 pcs On sales
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Shipping Cost
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Vishay IRC630PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay IRC630PBF.
- Categories
- Discrete Semiconductor Products
- Manufacturer
- Vishay Siliconix
- Packaging
- Tube
- Status
- Obsolete
- Transistor Polarity
- N-Channel
- Technology
- MOSFET
- Vds - Drain-Source Breakdown Voltage
- 200V
- Id - Continuous Drain Current
- 9A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Maximum) at Id, Vgs
- 400mOhm at 5.4A, 10V
- Gate Source Voltage(th) (Maximum) at Id
- 4V at 250μA
- Gate Charge (Qg) (Maximum) at Vgs
- 43nC at 10V
- Gate Source Voltage (Maximum)
- ±20V
- Input Capacitance (Ciss) (Maximum) at Vds
- 800pF at 25V
- FET Feature
- Current Sensing
- Power Dissipation (Maximum)
- 74W
- Temperature Range - Operating
- -55°C ~ 150°C
- Mounting Style
- Through Hole
- Supplier Device Package
- TO-220-5
- Manufacturer Package
- TO-220-5
- Manufacturer Pack Quantity
- 50
- MSL Level
- 1 (Unlimited)
- Manufacturer Homepage
- www.irf.com
- Popularity
- Medium
- Fake Threat In the Open Market
- 56 pct.
- Supply and Demand Status
- Limited
Company Profile
IRC630PBF Relevant information
IRC630
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
IRC630PBF
HEXFET POWER MOSFET | MOSFET N-CH 200V 9A TO-220-5
IRC634
Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)
IRC634PBF
MOSFET N-CH 250V 8.1A TO-220-5 / Trans MOSFET N-CH 250V 8.1A 5-Pin(5+Tab) TO-220
IRC640
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRC640PBF
MOSFET N-CH 200V 18A TO-220-5