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IRC640PBF

Transistors - FETs, MOSFETs - RF

Manufacturer No:
IRC640PBF
Manufacture:
Vishay
Datasheet:
IRC640PBF
Description:
MOSFET N-CH 200V 18A TO-220-5

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0 pcs On sales

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Shipping Method
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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay IRC640PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay IRC640PBF.

Categories
Discrete Semiconductor Products
Manufacturer
Vishay
Packaging
Tube/Rail
Status
Obsolete(EOL)
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
200V
Continuous Drain Current at 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 250μA
Max Gate Charge
70nC @ 10V
Max Input Capacitance
1300pF @ 25V
Maximum Gate-Source Voltage
±20V
FET Feature
Current Sensing
Power Dissipation (Max)
125W (Tc)
Maximum Rds On at Id,Vgs
180 mOhm @ 11A, 10V
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
Through Hole
Case / Package
TO-220-5
Dimension
TO-220-5
Popularity
Medium
Fake Threat In the Open Market
39 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

IRC640PBF Relevant information

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